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STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1
N-CHANNEL 550V @ Tjmax-0.30 - 12A TO-220/FP/D/IPAK Zener-Protected SuperMESHTMMOSFET
Table 1: General Features
TYPE STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP
s s s
Figure 1: Package
RDS(on) < 0.35 < 0.35 < 0.35 < 0.35 ID 12 A 12 A 12 A 12 A
1 2
VDSS (@Tjmax) 550 V 550 V 550 V 550 V
3
3 1 2
s s s
TYPICAL RDS(on) = 0.30 HIGH dv/dt AND AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE AND GATE CHARGE 100% AVALANCHE TESTED LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
TO-220
TO-220FP
3 1
12
3
D2PAK
I2PAK
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Figure 2: Internal Schematic Diagram
APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes
SALES TYPE STB12NM50T4 STB12NM50-1 STP12NM50 STP12NM50FP MARKING B12NM50 B12NM50 P12NM50 P12NM50FP PACKAGE DPAK IPAK TO-220 TO-220FP PACKAGING TAPE & REEL TUBE TUBE TUBE
Rev. 2 March 2005 1/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Table 3: Absolute Maximum ratings
Symbol Parameter
STB12NM50 STB12NM50 STP12NM50
Value
STP12NM50FP
Unit
VGS ID ID IDM ( ) PTOT VISO dv/dt (1) Tj Tstg
Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation Winthstand Voltage (DC) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 12 7.5 48 160 1.28 --
30 12 (*) 7.5 (*) 48 (*) 35 0.28 2500 15 -65 to 150 -65 to 150
V A A A W W/C V V/ns C C
( ) Pulse width limited by safe operating area (1) ISD 12A, di/dt 400A/s, VDD V(BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/ DPAK / IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 300 TO-220FP 3.57 C/W C/W C
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 6 400 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 30 V VDS = VGS, ID = 50 A VGS = 10 V, ID = 6 A 3 4 0.30 Min. 500 1 10 100 5 0.35 Typ. Max. Unit V A A nA V
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs (1) Ciss Coss Crss COSS eq (3). td(on) tr Qg Qgs Qgd Rg Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 5.5 1000 180 25 90 20 10 28 8 18 1.6 39 Max. Unit S pF pF pF pF ns ns nC nC nC Forward Transconductance VDS = 15 V , ID = 6 A
VGS = 0 V, VDS = 0 to 400 V VDD = 250 V, ID = 6 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 400 V, ID = 12 A, VGS = 10 V (see Figure 20) f = 1MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain
Table 8: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s VDD = 100V (see Figure 18) ISD = 12 A, di/dt = 100 A/s VDD = 100V, Tj = 150C (see Figure 18) 270 2.23 16.5 340 3 18 Test Conditions Min. Typ. Max. 12 48 1.5 Unit A A V ns C A ns C A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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Figure 3: Safe Operating Area For TO-220/ DPAK/IPAK Figure 6: Thermal Impedance TO-220/DPAK/ IPAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage vs Temperature
Figure 14: Normalized On Resistance vs Temperature
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 15: Source-Drain Forward Characteristics
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform
Figure 17: Switching Times Test Circuit For Resistive Load
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1
D
F
G1 H
F2
L2 L5
E
123
L4
G
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Table 9: Revision History
Date 27-Sep-2004 09-Mar-2005 Revision 1 2 Complete version New Stylesheet Description of Changes
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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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